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Power MOSFETs
HiPerFET TM
IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
N-Channel Enhancement Mode
High dv/dt, Low t rr , HDMOS TM Family
V DSS I D25 R DS(on)
500 V 21 A 0.25 ?
500 V 24 A 0.23 ?
500 V 26 A 0.20 ?
t rr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXFH)
V DSS
T J = 25 ° C to 150 ° C
500
V
V DGR
V GS
V GSM
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
Transient
500
± 20
± 30
V
V
V
TO-268 (D3) Case Style
(TAB)
I D25
T C = 25 ° C
21N50
24N50
21
24
A
A
I DM
T C = 25 ° C, pulse width limited by T JM
26N50
21N50
26
84
A
A
G
I AR
T C = 25 ° C
24N50
26N50
21N50
96
104
21
A
A
A
S
TO-204 AE (IXFM)
(TAB)
24N50
26N50
24
26
A
A
E AR
T C = 25 ° C
30
mJ
dv/dt
P D
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
5
300
V/ n s
W
G = Gate,
S = Source,
D
D = Drain,
TAB = Drain
G
T J
T JM
T stg
T L
M d
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
-55 ... +150
150
-55 ... +150
300
1.13/10
° C
° C
° C
° C
Nm/lb.in.
Features
? International standard packages
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
rated
? Low package inductance
- easy to drive and to protect
Weight
TO-204 = 18 g, TO-247 = 6 g
? Fast intrinsic Rectifier
Applications
? DC-DC converters
? Synchronous rectification
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
? Battery chargers
? Switched-mode and resonant-mode
power supplies
? DC choppers
V DSS
V GS = 0 V, I D = 250 μ A
500
V
? AC motor control
? Temperature and lighting controls
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 4 mA
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
2
4
± 100
200
1
V
nA
μ A
mA
? Low voltage relays
Advantages
? Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
? High power surface mountable package
? High power density
? 1999 IXYS All rights reserved
91525H (9/99)
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